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Electrical Speci?cations
TC
= 25
oC, Unless Otherwise Speci?ed
SYMBOL TEST CONDITION
MUR840, RURP840
MUR860, RURP860
UNIT
MIN TYP MAX MIN TYP MAX
VF
-
-
1.3
-
-
1.5 V
-
-
1.0
-
-
1.2 V
IR
-
- 100 -
-
-
μA
-----100μA
--500 ---μA
C
-----500μA
trr
s
- -60- -60ns
s
-
-70- -70ns
ta
-
32
-
-
32
-
ns
tb
-
21
-
-
21
-
ns
Qrr
- 195 -
- 195 -
nC
CJ
IF
= 8
A
IF
= 8
A, TC
= 150oC
VR
= 400
V
VR
= 600
V
VR
= 400
V, TC
= 150oC
VR
= 600
V, TC
= 150o
IF
= 1
A, dIF/dt = 200
A/μ
IF
= 8
A, dIF/dt = 200
A/μ
IF
= 8
A, dIF/dt = 200
A/μs
IF
= 8
A, dIF/dt = 200
A/μs
IF
= 8
A, dIF/dt = 200
A/μs
VR
= 10
V, IF
=
A
0
-25- -25-pF
RθJC
--2--2oC/W
DEFINITIONS
VF
= Instantaneous forward voltage (pw = 300
μs, D = 2%).
IR
= Instantaneous reverse current.
Trr
= Reverse recovery time (See Figure 9), summation of ta
+ tb.
ta
= Time to reach peak reverse current (See Figure 9).
tb
= Time from peak IRM
to projected zero crossing of IRM
based on a straight line from peak IRM
through 25% of IRM
(See Figure 9).
Qrr
= Reverse recovery charge.
CJ
= Junction Capacitance.
RθJC
= Thermal resistance junction to case.
pw = pulse width.
D = duty cycle.
Typical Performance Curves
FIGURE 1.
FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
VF, FORWARD VOLTAGE (V)
I
F
, FORWARD CURRENT (A)
1
40
0.5
0
10
0.5
1
1.5
2
2.5
175oC
25oC
100oC
VR, REVERSE VOLTAGE (V)
0.010 200 400 600100
300 500
500
0.1
1
10
100
175oC
100oC
25oC
I
R
, REVERSE CURRENT (
μ
A)
MUR840, MUR860, RURP840, RURP860
?2001
Fairchild Semiconductor Corporation
MUR840, MUR860,
RURP840, RURP860
Rev. C1
www.fairchildsemi.com
2
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